FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):>50V
Current – Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:146nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3247pF @ 25V
Vgs (Max):±20V
Power Dissipation (Max):200W (Tc)
Rds On (Max) @ Id, Vgs<8 mOhm @ 62A, 10V
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
